6
RF Device Data
Freescale Semiconductor
MRFE6S9046NR1 MRFE6S9046GNR1
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
0.1 1001
10
?70
?10
?20
?30
?50
?40
IRL, INPUT RETURN LOSS (dB)
920
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 35.5
Watts CW
?28
?16
?19
?22
?25
18.6
19.6
48
58
57
56
55
53
52
51
50
G
ps
, POWER GAIN (dB)
925 930 935 940 945 950 955 960
54
49
?31
η
D
, DRAIN EFFICIENCY (%)
VDD= 28 Vdc, Pout
= 35.5 W CW, I
DQ
= 300 mA
IRL, INPUT RETURN LOSS (dB)
920
IRL
Gps
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout
= 17.8
Watts Avg.
?35
?15
?20
?25
?30
18.5
19.5
1
42
41
40
39
6
5
4
3
G
ps
, POWER GAIN (dB)
925 930 935 940 945 950 955 960
38
2
?40
VDD= 28 Vdc, Pout
= 17.8 W (Avg.)
IDQ
= 285 mA, EDGE Modulation
Pout, OUTPUT POWER (WATTS) CW
15
21
1
IDQ
= 450 mA
VDD
= 28 Vdc
f = 940 MHz
20
18
17
10 100
Figure 6. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
19
300 mA
375 mA
TWO?TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Two-Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
EVM
EVM, ERROR VECTOR
MAGNITUDE (% rms)
IM3?U
IM3?L
IM5?U
IM5?L
IM7?L
IM7?U
VDD
= 28 Vdc, P
out
= 44
W (PEP), IDQ
= 300
mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 940
MHz
ηD
ηD
18.7
19.5
19.4
19.3
19
18.9
18.8
19.2
19.1
19.4
19.3
19.2
19.1
19
18.9
18.8
18.7
18.6
16
225 mA
150 mA
?60
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